| PART |
Description |
Maker |
| TGF2022-24 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2021-01 |
DC-12 GHz Discrete Power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2021-04 |
DC - 12 GHz Discrete power pHEMT 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
TRIQUINT SEMICONDUCTOR INC
|
| MRF4427 MRF4427R1 MRF4427R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Yageo, Corp.
Microsemi Corporation
|
| VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻，高功率-卓越的长期稳
Resistors, fixed discrete
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| TGF4250-SCC |
DC - 10.5 GHz Discrete HFET X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
|
TriQuint Semiconductor, Inc.
|
| MJD2955-001 MJD3055T4 |
Power 10A 60V Discrete PNP
Power 10A 60V Discrete NPN
|
ON Semiconductor
|
| FMPA2151 |
2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)
|
Fairchild Semiconductor
|
| BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
| AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging
10-Bit D-Type Latch
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器
8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
| SA1070 |
TDMA 8-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module
|
ETC[ETC]
|
